Memory
HBM, DDR, NAND · the bandwidth behind every model.
Top 12 terms
TSMC's next-gen advanced packaging · enables 12+ HBM stacks and multi-die GPUs · used on B300, MI400.
TSMC's previous-gen advanced packaging · used on H100 / A100 · being phased out for CoWoS-L.
Wafer-to-wafer bonding technique that skips bumps · enables 3D stacking for HBM4 and advanced packaging.
Vertically stacked NAND flash · used for AI training data storage · 300+ layers in 2026 flagship nodes.
The planned next generation of mainstream DRAM after DDR5.
GDDR memory · 2025 · 192 GB/s per device.
HBM memory · 2026 · 1,740 GB/s per stack.
HBM memory · 2024 · 1,180 GB/s per stack.
HBM memory · 2022 · 819 GB/s per stack.
HBM memory · 2020 · 460 GB/s per stack.
DDR memory · 2021 · 51 GB/s per device.
LPDDR memory · 2022 · 34 GB/s per device.